MUR1100 [BL Galaxy Electrical]
HIGH EFFICIENCY RECTIFIER; 高效率整流
| 型号： | MUR1100 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | HIGH EFFICIENCY RECTIFIER |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
MUR170 --- MUR1100
BL
VOLTAGE RANGE: 700---1000 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
DO - 41
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Easily cleaned with Freon,Alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Terminals: Axial leads,solderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces, 0.34grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MUR170 MUR180
MUR190 MUR1100 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
700
490
700
800
560
800
V
V
V
VRRM
VRMS
VDC
900
630
900
1000
700
Maximum DC blocking voltage
1000
Maximum average forw ard rectified current
9.5mm lead length, @TA=75
A
1.0
IF(AV)
Peak forw ard surge current
10ms single half-sine-w ave
30.0
A
V
IFSM
superimposed on rated load
@TJ=125
Maximum instantaneous forw ard voltage
@ 1.0A
1.7
VF
IR
Maximum reverse current
@TA=25
10.0
A
at rated DC blocking voltage @TA=100
100.0
75
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
trr
ns
pF
(Note2)
(Note3)
15
CJ
60
/W
Rθ
JA
Operating junction temperature range
- 55 ----- + 150
- 55 ----- + 150
TJ
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MH and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
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Z
BLGALAXY ELECTRICAL
1.
Document Number 0262021
RATINGS AND CHARACTERISTIC CURVES
MUR170 --- MUR1100
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
N 1.
10
N 1.
+0.5A
D.U.T.
0
(+)
PULSE
GENERATOR
(NOTE2)
-0.25A
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCEIMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARDCHARACTERISTIC
FIG.3 -- FORWARDDERATINGCURVE
10
1.0
0.8
0.6
1.0
TJ=25
Pulse Width=300µS
0.1
Single Phase
0.4
Half Wave 60H
Z
Resistive or
Inductive Load
0.01
0.2
0
0
25
50
75
100
125
150
175
0.001
0
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8 2
AMBIENTTEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- PEAK FORWARD SURGE CURRENT
Z
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
50
60
40
40
30
TJ=125
8.3ms Single Half
Sine-Wave
20
10
6
20
10
0
4
TJ=25
2
1
1
5
10
50
100
0.1 0.2 0.4
1
2
4
10 20
40
100
NUMBEROF CYCLES AT60Hz
REVERSE VOLTAGE,VOLTS
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BLGALAXY ELECTRICAL
2.
Document Number 0262021
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